Method for the production of polycrystalline layers having granu

Details Method for the production of polycrystalline layers having granu Method for the production of polycrystalline layers having granu

1991-09-06

1993-08-24

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437234, 437 83, 136258, 1566207, 15662072, 148DIG122, 148DIG152, 148DIG154, H01L 3102, H01L 21321, H01L 21322, H01L 21324

Patent

active

052388794

ABSTRACT:
A method for producing polycrystalline layers having granular crystalline structure is provided. Pursuant to the method, a thin intermediate layer of amorphous is deposited before the deposition of the polycrystalline layer in order to avoid crystal structure influence proceeding from the substrate. The layer is then recrystallized applying a pattern of crystallization points or the amorphous layer. A detrimental effect of the fine-crystalline structure of the substrate is prevented by the amorphous intermediate layer. Pursuant to the present invention, the thin-film technology can also be utilized for polycrystalline silicon layers, this being especially desirable in the manufacture of solar cells.

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