Method for the production of planar structures

Details Method for the production of planar structures Method for the production of planar structures

2011-08-23

2011-08-23

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C257S415000, C257S416000, C257S417000, C257S418000, C257S532000, C438S619000, C438S689000, C438S691000, C438S692000, C438S693000, C430S322000, C430S323000, C430S324000

Reexamination Certificate

active

08003537

ABSTRACT:
A method for the production of a planar structure is disclosed. The method comprises producing on a substrate a plurality of structures of substantially equal height, and there being a space in between the plurality of structures. The method further comprises providing a fill layer of electromagnetic radiation curable material substantially filling the space between the structures. The method further comprises illuminating a portion of the fill layer with electromagnetic radiation, hereby producing a exposed portion and an unexposed portion, the portions being separated by an interface substantially parallel with the first main surface of the substrate. The method further comprises removing the portion above the interface.

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