Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1988-06-24
1990-10-30
Roy, Upendra
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
156610, 427 531, 427 57, 437 18, 505730, 428930, H01L 3924, B22F 904
Patent
active
049668870
ABSTRACT:
The present invention relates to a method of directly forming a thin, oriented layer, or film, of superconducting materials, or compositions suitably mixtures of Perovskite-type superconducting oxides, on a support base, or substrate, by the use of a laser assisted molecular beam epitaxy. The method steps generally comprise forming at least one target comprised of metallic precursors of a superconducting oxide composition and vaporizing at least a portion of the target using a vaporization laser beam to produce a vaporized precursor of an appropriate or desired entrained in a pulsed, rapidly flowing, gaseous atmosphere containing at least one gas reactive with said vaporized precursor composition to form a reacted precursor of a superconducting composition. The reacted precursor composition is then formed into a substantially singular, uniform molecular beam, and deposited on a substrate in the form of a thin layer. The apparatus comprises a vaporization laser capable of producing a pulsed laser beam, a pulsed supersonic nozzle having a target chamber, a pressure chamber and a reaction tube, the reaction tube having an entry end and an exit end, the exit end having a microscopic-sized outlet. Means are provided for focusing said pulsed laser beam into the target chamber and for pulsing gases from the pressure chamber, through the target chamber and into the reaction tube. The condensed products from the gaseous reaction are, in turn, ejected through the microscopic-sized outlet in the exit end of the reaction tube.
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Dunn Michael L.
Park Ellen K.
Roy Upendra
The Research Foundation of State University of NY
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