Stock material or miscellaneous articles – Composite – Of silicon containing
Reexamination Certificate
2005-02-22
2005-02-22
Stein, Stephen (Department: 1775)
Stock material or miscellaneous articles
Composite
Of silicon containing
C428S397000, C428S401000, C117S928000, C117S932000, C423S348000
Reexamination Certificate
active
06858307
ABSTRACT:
A process for the preparation of a silicon single ingot in accordance with the Czochralski method. The process for growing the single crystal silicon ingot comprises controlling (i) a growth velocity, v, (ii) an average axial temperature gradient, G0, during the growth of a constant diameter portion of the crystal over a temperature range from solidification to a temperature of no less than about 1325° C. to initially produce in the constant diameter portion of the ingot a series of predominant intrinsic point defects including vacancy dominated regions and silicon self interstitial dominated regions, alternating along the axis, and cooling the regions from the temperature of solidification at a rate which allows silicon self-interstitial atoms to diffuse radially to the lateral surface and to diffuse axially to vacancy dominated regions to reduce the concentration intrinsic point defects in each region.
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Banan Mohsen
Falster Robert J.
Vornokov Vladimir V.
MEMC Electronic Materials , Inc.
Senniger Powers
Stein Stephen
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