Method for the production of image sensors

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

Reexamination Certificate

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C250S208100

Reexamination Certificate

active

10497668

ABSTRACT:
The invention relates to a method for producing image sensors on the basis of TFA technology including of an amorphous thin-layer system that has been applied on a crystalline ASIC. The inventive method enables the production of image sensors on the basis of TFA technology, which improve the picture quality at low luminous intensity by reducing the dark currents. The photodiodes in the thin-layer material that are configured as pixels are linked with transistor structures in the crystalline ASIC via back electrodes. The transistor structures have particularly low leakage currents due to implantation technology or optimization of the production process.

REFERENCES:
patent: 6501065 (2002-12-01), Uppal et al.
International Search Report from a corresponding International Application WO 03/054919, filed Dec. 4, 2002.
Lule T. et al., “Sensitivity of CMOS Based Imagers and Scaling Perspectives,” IEEE Transactions on Electron Devices, IEEE Inc. New York, vol. 47, no. 11, Nov. 2000.
Lule T. et al., “1000 000-Pixel, 120-DB Imager in TFA Technology,” IEEE Journal of Solid-State Circuits, IEEE Inc. New York, vol. 35, No. 5, May 1, 2000.

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