Method for the production of a semiconductor laser

Fishing – trapping – and vermin destroying

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437107, 437133, 148DIG95, H01L 2120

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active

052602311

ABSTRACT:
A semiconductor laser device is disclosed which emits laser light from a facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an AlGaAs active layer for laser oscillation, and a protective film formed on the facet, wherein a film containing sulfur is provided between the facet and the protective film.

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Sandroff et al., "Dramatic Enhancement in the Gain of GaAs/AlGaAs Heterostructure Bipolar Transistor by Surface Chemical Passivation" Appl. Phys. Lett. (1987) 51(1):33-35.
Oigawa et al., "Stabilization of GaAs Surface/Interface by Sulfur Treatment" Extended Abstracts of the 20th (1988 International) Conference on Solid State Devices and Materials, Tokyo, (1988) pp. 263-266.
Hiroshige et al., "Manufacture of Semiconductor Laser" Patent Abstracts of Japan, vol. 12, No. 256, Group E635, 1 page total (Jul. 19, 1988).
Hiroyoshi, "Semiconductor Laser" Patent Abstracts of Japan, vol. 8, No. 127, Group E250, 1 page total (Jun. 14, 1984).
Hiroyuki et al., "Semiconductor Laser with Plasma Protective Film and Manufacture Thereof" Patent Abstracts of Japan, vol. 12, No. 94, Group E593, 1 page total (Mar. 26, 1988).
Yablonovitch et al., "Nearly Ideal Electronic Properties of Sulfide Coated GaAs Surfaces" Appl. Phys. Lett. (1987) 51(6):439-441.
Kawanishi et al., "Effects of (NH.sub.4).sub.2 S Treatments on the Characteristics of AlGaAs Laser Diodes" Extended Abstracts of the 21st Conference on Solid State Devices and Materials Tokyo, (1989) pp. 337-340.

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