Method for the production of a semiconductor device by implantin

Details Method for the production of a semiconductor device by implantin Method for the production of a semiconductor device by implantin

1991-08-02

1992-10-27

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 22, 437930, H04L 21265

Patent

active

051588978

ABSTRACT:
There is provided a method for producing a semiconductor device having a semiconductor layer in which carbon is implanted as an impurity. The method includes the steps of: implanting fluorocarbon ions in a semiconductor layer; and annealing the semiconductor layer to activate the implanted ions.

REFERENCES:
Yamahata et al., Shingaku-Giho Electronic Devices, ED89-56, (1989), pp. 43-48.

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