Method for the production of a semiconductor component...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure

Reexamination Certificate

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C257S690000, C438S026000

Reexamination Certificate

active

07859005

ABSTRACT:
In a method for producing a semiconductor component, in particular a semiconductor structure having a surface structure or topography which is produced by means of electronic components (2) on a substrate (1), at least one electronic component (2) is applied to a substrate (1), and an isolation layer (3) is applied to the topography which is produced by means of the at least one component (2) on the substrate (1). Contact-making openings (5) are then produced in the isolation layer (3) at contact points (8, 9) for the at least one electronic component, the isolation layer (3) and the contact points (8, 9) in the contact-making openings (5) are planar-metallized, and the metallization is structured in order to produce electrical connections (4), with the isolation layer (3) having a glass coating.

REFERENCES:
patent: 4017340 (1977-04-01), Yerman
patent: 6218223 (2001-04-01), Ikeda et al.
patent: 6881980 (2005-04-01), Ting
patent: 6911714 (2005-06-01), Parsons et al.
patent: 7402457 (2008-07-01), Hase et al.
patent: 2005/0032347 (2005-02-01), Hase et al.
patent: 2005/0151141 (2005-07-01), Grotsch et al.
patent: 103 51 397 (2005-06-01), None
patent: 1 313 146 (2003-05-01), None
patent: WO 03/030247 (2003-04-01), None

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