Semiconductor device manufacturing: process – Making passive device – Trench capacitor
Reexamination Certificate
2006-05-09
2006-05-09
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Making passive device
Trench capacitor
C438S778000, C438S779000, C438S671000
Reexamination Certificate
active
07041568
ABSTRACT:
A structure on a layer surface of the semiconductor wafer has at least one first area region (8, 9), which is reflective for electromagnetic radiation, and at least one second, essentially nonreflecting area region (10, 11, 12). A light-transmissive insulation layer (13) and a light-sensitive layer are produced on said layer surface. The electromagnetic radiation is directed onto the light-sensitive layer with an angle Θ of incidence and the structure of the layer surface is imaged with a lateral offset into the light-sensitive layer.
REFERENCES:
patent: 5879866 (1999-03-01), Starikov et al.
patent: 5935763 (1999-08-01), Caterer et al.
patent: 5981150 (1999-11-01), Aoki et al.
patent: 6022764 (2000-02-01), Park et al.
patent: 6031291 (2000-02-01), Sato et al.
patent: 6080654 (2000-06-01), Manchester
patent: 6518640 (2003-02-01), Suzuki et al.
patent: 6570223 (2003-05-01), Machida et al.
patent: 6794207 (2004-09-01), Hasegawa et al.
patent: 198 45 058 (2000-04-01), None
patent: 0 083 397 (1983-07-01), None
patent: 0 523 768 (1993-01-01), None
Goldbach Matthias
Hecht Thomas
Lützen Jörn
Sell Bernhard
Infineon - Technologies AG
Smith Zandra V.
Tran Thanh Y.
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