Method for the production of a polycrystalline shaped body of si

Details Method for the production of a polycrystalline shaped body of si Method for the production of a polycrystalline shaped body of si

1981-11-23

1985-01-22

Bell, Mark

Plastic and nonmetallic article shaping or treating: processes

Including step of generating heat by friction

264325, 501 88, 501 90, C04B 3556

Patent

active

044951221

ABSTRACT:
Method for the production of a polycrystalline shaped body of silicon carbide of a density of at least 98% of the theoretical density of silicon carbide, prepared through pressureless sintering at temperatures from 1,900 to 2,200 C. from at least 97 weight % of .alpha.-silicon carbide and/or .beta.-silicon carbide under addition of up to 3 weight % of boron, characterized by the fact that the shaped body is prepared without any carbon additions to the batch and is pressureless sintered in a carbon containing protective gas atmosphere.

REFERENCES:
patent: 4172109 (1979-10-01), Smoak
patent: 4237085 (1980-12-01), Smoak
patent: 4372902 (1983-02-01), Denton et al.

Affiliated with

Also associated with

Rating

Method for the production of a polycrystalline shaped body of si does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for the production of a polycrystalline shaped body of si, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the production of a polycrystalline shaped body of si will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-566137