Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1974-08-28
1976-05-25
Ozaki, G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148172, 148 15, 148 335, 252 623GA, H01L 738
Patent
active
039590364
ABSTRACT:
A heavily germanium doped gallium arsenide layer is epitaxially deposited from solution on a Group III-V compound semiconductor device in order to provide contact between the device and external metallic circuitry. If the net p-type carrier concentration in the layer is greater than 3.5 .times. 10.sup.19 per cubic centimeter, the blocking voltage between the device and common contacting metals, such as chromium and titanium is less than 50 millivolts. Deposition takes place at temperatures from 850.degree.C to 700.degree.C with germanium included in the solution in a concentration from 20 to 50 atom percent.
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Rosztoczy et al., J. Electrochem. Soc.: Solid-State Science and Technology, Vol. 119, No. 8, Aug. 1972, pp. 1119-1121.
Bell Telephone Laboratories Incorporated
Friedman A. N.
Ozaki G.
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