Method for the production of a gate turn-off thyristor having an

Details Method for the production of a gate turn-off thyristor having an Method for the production of a gate turn-off thyristor having an

1997-09-04

1999-02-09

Bowers, Charles

Semiconductor device manufacturing: process

Making regenerative-type switching device

H01L 21332

Patent

active

058693580

ABSTRACT:
A two-stage method is proposed for producing a highly transparent anode emitter (2) in a GTO (1). In a first step, an anode emitter (2) is indiffused whose thickness is greater than 0.5 .mu.m and whose doping concentration is greater than 10.sup.17 cm.sup.-3. In a second step, the emitter efficiency of the anode emitter (2) is subsequently reduced to a desired degree by local carrier life setting.

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patent: 4987087 (1991-01-01), Voss
patent: 5710445 (1995-06-01), Bauer et al.
A. Hallen, et al., "Multiple Proton Energy Irradiation of Improved GTO Thyristors", Solid-State Electonics, vol. 36, No. 2, 1993 pp. 133-141.

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