Method for the production of a bipolar transistor comprising...

Details Method for the production of a bipolar transistor comprising... Method for the production of a bipolar transistor comprising...

2005-01-19

2009-11-17

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C438S345000, C257SE21379, C257SE29044

Reexamination Certificate

active

07618871

ABSTRACT:
For the production of an improved bipolar transistor comprising a low-resistance base terminal, a dielectric layer is deposited over the semiconductor substrate and is highly doped via an implantation mask. In a subsequent controlled thermal step, the dopant is then indiffused into the semiconductor substrate from the dielectric layer serving as a dopant repository. This gives rise to a low-resistance region with which the extrinsic base can be defined carefully.

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