Method for the production of a bipolar transistor

Details Method for the production of a bipolar transistor Method for the production of a bipolar transistor

2006-09-12

2006-09-12

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C438S366000, C438S368000, C438S378000

Reexamination Certificate

active

07105415

ABSTRACT:
The invention relates to a method for producing a bipolar transistor. A semiconductor substrate is provided that encompasses a collector area of a first conductivity type, which is embedded therein and is bare towards the top. A monocrystalline base area is provided and a base-connecting area of the second conductivity type is provided above the base area. An insulating area is provided above the base-connecting area and a window is formed in the insulating area and the base-connecting area so as to at least partly expose the base area. An insulating sidewall spacer is provided in the window in order to insulate the base-connecting area. An emitter layer which forms a monocrystalline emitter area above the base area and a polycrystalline emitter area above the insulating area and the sidewall spacer is differentially deposited and structured, and a tempering step is carried out.

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