Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of...
Reexamination Certificate
2007-10-23
2007-10-23
Prenty, Mark V. (Department: 2822)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
C438S364000
Reexamination Certificate
active
11240297
ABSTRACT:
The invention relates to a method for producing a bipolar semiconductor element, especially a bipolar transistor, and a corresponding bipolar semiconductor component. The inventive method comprises the following steps: a first semiconductor area (32, 34) of a first conductivity type (p) is provided above a semiconductor substrate (1); a connecting area (40) of the first conductivity type (p<+>) is provided above the semiconductor area (32, 34); a first insulating area (35″) is provided above the connecting area (40); a window (F) is formed within the first insulating area (35″) and the connecting area (40) so as to at least partly expose the semiconductor area (32, 34); a sidewall spacer (80) is provided in the window (F) in order to insulate the connecting area (40); a second semiconductor area (60) of the second conductivity type (n+) is provided so as to cover the sidewall spacer (80) and a portion of the surrounding first insulating area (35″); the surrounding first insulating area (35″) and the sidewall spacer (80) are removed in order to form a gap (LS) between the connecting area (40) and the second semiconductor area (60); and the gap (LS) is sealed by means of a second insulating area (100) while a gaseous atmosphere or a vacuum atmosphere is provided inside the sealed gap (LS).
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International Search Report dated Aug. 16, 2004.
German Office Action dated Jan. 5, 2004.
Bock Josef
Meister Thomas
Schafer Herbert
Stengl Reinhard
Jenkins Wilson Taylor & Hunt, P.A.
Prenty Mark V.
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