Method for the preparation of IV-VI semiconductor nanoparticles

Details Method for the preparation of IV-VI semiconductor nanoparticles Method for the preparation of IV-VI semiconductor nanoparticles

2007-04-24

2007-04-24

Vanoy, Timothy C. (Department: 1754)

Chemistry of inorganic compounds

Selenium or tellurium or compound thereof

C423S509000, C423S561100, C423S618000, C423S619000, C423S344000, C423S089000, C423S092000, C438S046000, C438S077000, C438S483000, C977S813000, C977S814000, C977S773000, C977S774000, C977S775000

Reexamination Certificate

active

10994944

ABSTRACT:
A high temperature non-aqueous synthetic procedure for the preparation of substantially monodisperse IV-VI semiconductor nanoparticles is provided. The procedure includes introducing a first precursor selected from the group consisting of a molecular precursor of a Group IV element and a molecular precursor of a Group VI element into a reaction vessel that comprises at least an organic solvent to form a mixture. Next, the mixture is heated and thereafter a second precursor of a molecular precursor of a Group IV element or a molecular precursor of a Group VI element that is different from the first is added. The reaction mixture is then mixed to initiate nucleation of IV-VI nanocrystals and the temperature of the reaction mixture is controlled to provide nanoparticles having a diameter of about 20 nm or less.

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