Method for the preparation of high purity aluminum nitride

Details Method for the preparation of high purity aluminum nitride Method for the preparation of high purity aluminum nitride

1987-10-29

1996-11-12

Nelson, Peter A.

Chemistry of inorganic compounds

Nitrogen or compound thereof

Binary compound

C01B 21072

Patent

active

055737420

ABSTRACT:
A process and apparatus for making high purity aluminum nitride from organometallic aluminum, such as an alkylaluminum compound. A gaseous alkylaluminum compound and gaseous ammonia are introduced into a heated reaction zone where the gases are mixed and high purity aluminum nitride is produced. The high purity aluminum nitride is collected in the form of a powder or deposited as a thick, dense layer on an appropriate substrate mounted in the reaction chamber. A carrier gas such as hydrogen gas, may be used to conduct the alkylaluminum compound from a suitable reservoir containing liquid alkylaluminum compound to the reaction chamber. A preferred alkylaluminum compound is triethylaluminum.

REFERENCES:
patent: 4615863 (1986-10-01), Inoue et al.
patent: 4656101 (1987-04-01), Yamazaki
patent: 4740574 (1988-04-01), Bolt et al.
patent: 4764489 (1988-08-01), Bolt
patent: 4783430 (1988-11-01), Su

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