Method for the preparation of epitaxial films of mercury cadmium

Details Method for the preparation of epitaxial films of mercury cadmium Method for the preparation of epitaxial films of mercury cadmium

1983-02-22

1984-12-11

Saba, William G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576E, 156610, 156611, 156613, 156614, 156DIG72, 156DIG82, 252 623ZT, H01L 21365, H01L 29221

Patent

active

044876408

ABSTRACT:
A method for depositing a (Hg,Cd)Te film onto a CdTe substrate by using two separate vaporizeable sources of reactant materials each maintained at separate and distinct temperatures followed by the step of mixing both of each sources with a hydrogen halide gas and passing the resulting mixtures over a CdTe substrate maintained at a lower temperature distinct and different from the temperatures maintained during vaporization of the two distinct vaporizeable sources.

REFERENCES:
patent: 3145125 (1964-08-01), Lyons
patent: 3218203 (1965-11-01), Ruehrwein
patent: 3312571 (1967-04-01), Ruehrwein
Golacki et al., "Crystallization of HgCd.Te--Chemical Transport" J. Crystal Growth, vol. 47, 1979, pp. 749-750.
Taylor, R. C., "Epitaxial Deposition of GaAs in an Argon Atmosphere" J. Electrochem. Soc., vol. 114, No. 4, Apr. 1967, pp. 410-412.

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