Method for the preparation of diffused silicon semiconductor com

Details Method for the preparation of diffused silicon semiconductor com Method for the preparation of diffused silicon semiconductor com

1975-06-19

1977-09-27

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148186, H01L 21228

Patent

active

040509664

ABSTRACT:
A method for preparing semiconductor components from silicon as the base material. The components have at least two zones, produced by diffusion, with different conduction type. The diffusion of the individual zones takes place from dopant containing nickel layers applied at the semiconductor crystal surface. The nickel layer including the dopant contained therein, is applied by chemical means.

REFERENCES:
patent: 2974073 (1961-03-01), Armstrong
patent: 3084079 (1963-04-01), Harrington
patent: 3172785 (1965-03-01), Jochems et al.
patent: 3183130 (1965-05-01), Reynolds et al.
patent: 3473533 (1969-04-01), Dingwall
patent: 3485684 (1969-12-01), Mann et al.
patent: 3601888 (1971-08-01), Engeler et al.

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