Method for the preparation of a fine powder of silicon carbide

Details Method for the preparation of a fine powder of silicon carbide Method for the preparation of a fine powder of silicon carbide

1985-02-27

1987-06-30

Dixon, Jr., William R.

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

501 88, 501 90, 556432, C01B 3136

Patent

active

046769668

ABSTRACT:
The invention provides a novel method for the preparation of a finely divided powder of silicon carbide as a promising material for sintered ceramic products of silicon carbide. The method comprises vapor-phase pyrolysis of a vaporizable organosilicon compound having, in a molecule, at least two, e.g. 2, 3 or 4, silicon atoms and at least one hydrogen atom directly bonded to the silicon atom but having no oxygen or halogen atom directly bonded to the silicon atom at a temperature of 750.degree. C. or higher.

REFERENCES:
patent: 4117057 (1978-09-01), Yajima et al.
patent: 4298559 (1981-11-01), Baney et al.
patent: 4310482 (1982-01-01), Baney
patent: 4404153 (1983-09-01), Gaul, Jr.
patent: 4414403 (1983-11-01), Schilling, Jr. et al.
patent: 4571331 (1986-02-01), Endou et al.

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