Fishing – trapping – and vermin destroying
Patent
1993-08-30
1995-01-31
Breneman, R. Bruce
Fishing, trapping, and vermin destroying
148DIG113, H01L 2100, H01L 2102, H01L 21203
Patent
active
053858620
ABSTRACT:
This invention relates to a method of preparing highly insulating GaN single crystal films in a molecular beam epitaxial growth chamber. A single crystal substrate is provided with the appropriate lattice match for the desired crystal structure of GaN. A molecular beam source of Ga and source of activated atomic and ionic nitrogen are provided within the growth chamber. The desired film is deposited by exposing the substrate to Ga and nitrogen sources in a two step growth process using a low temperature nucleation step and a high temperature growth step. The low temperature process is carried out at 100.degree.-400.degree. C. and the high temperature process is carried out at 600.degree.-900.degree. C. The preferred source of activated nitrogen is an electron cyclotron resonance microwave plasma.
REFERENCES:
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"Growth of Cubic GaN Films on (100) Si by ECR Assisted MBE", T. Lei et al., Bulletin of the American Physical Society, 36 No. 3 (Mar., 1991).
"Growth of GaN Films on the a-plane of Sapphire by ECR Assisted MBE", G. Merion et al., Bulletin of the American Physical Society, 36 No. 3 (Mar., 1991).
"Growth of Single Crystalline GaN Films on the R-plane of Sapphire by ECR Assisted", C. R. Eddy et al., Bulletin of the American Physical Society, 36 No. 3 (Mar., 1991).
"Electron Beam Effects on Blue Luminescence of Zinc-Doped GaN", Hiroshi Amano et al., 40 and 41, pp. 121-122 (Feb., 1988).
"Commercialization of GaN Blue LED with The Highest Reported Light Intensity in The World", unknown author, Japanese R&D Trend Analysis, 33 (Jan., 1991).
"Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film on Sapphire by MOVPE Using an A1N Buffer Layer," Hiroshi Amano, Feb. 1990, pp. L205-L206.
Sitar, Z., Design and performance of an electron cyclotron resonance plasma source for standard molecular beam epitaxy equipment, Rev. Sci. Instrum. 61(9), Sep. 1990, pp. 2407-2411.
Breneman R. Bruce
Everhart Byron
Trustees of Boston University
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