Method for the plasma treatment of semiconductor devices

Details Method for the plasma treatment of semiconductor devices Method for the plasma treatment of semiconductor devices

1990-10-17

1993-05-11

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437228, 427569, 118501, 118620, H01L 2100, H01L 2102, H01L 21302

Patent

active

052100553

ABSTRACT:
In an apparatus for the plasma treatment of semiconductor devices, a cover is provided on the outer periphery of the space between the upper and lower electrodes. By virtue of the provision of the cover on the outer periphery of the inter-electrode space, the processing gas ejected from ejection holes on one surface of the upper electrode diffuses evenly in the inter-electrode space to reach the surface of the semiconductor wafer. Therefore, it is possible to improve the efficiency at which the wafer is processed as well as the evenness with which various portions of the surface of the wafer are treated.

REFERENCES:
patent: 4479455 (1984-10-01), Doehler et al.
patent: 4511593 (1985-04-01), Brandolf
patent: 4512283 (1985-04-01), Bonifield et al.
patent: 4626447 (1986-12-01), Doehler et al.

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