Fishing – trapping – and vermin destroying
Patent
1990-02-05
1991-10-08
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437102, 437103, 437225, 437228, 427 38, 427 39, 427 41, 148DIG1, 357 2, 118 501, 118620, H01L 2100, H01L 2102, H01L 21205, H01L 21314
Patent
active
050554212
DESCRIPTION:
BRIEF SUMMARY
FIELD OF THE INVENTION
The invention relates to a new semiconductor base material with high semiconductor characteristic potential consisting of thin layers of amorphous, hydrogenous, i.e. hydrogenated, carbon (a-C:H), as well as a method for producing such a semiconductor base material.
DESCRIPTION OF THE RELATED ART
Single-crystalline silicon (Si) and gallium-arsenide (GaAs) with very high n and p charge carrier mobilities (>>1 cm.sup.2 .multidot.V.sup.-1 .multidot.s.sup.-1) are particularly known as semiconductor base materials. The disadvantage of these materials is that they are not able to be manufactured as thin layers according to a band technology with flexible carriers and that high-temperature processes are required for their manufacture and processing.
Amorphous, hydrogenous silicon (a-Si:H) is also known as a semiconductor base material. To be sure, this material can be produced on a thin-layer base, as a rule however, its n and p charge carrier mobility lies considerably below 1 cm.sup.2 .multidot.V.sup.-1 .multidot.s.sup.-1 (see: J. Dresner in "Semiconductors and Semimetals", Vol. 21, Part C (1984), pages 193 ff.).
The Japanese Published Patent Application 59-26906 (dated 2/13/1984) describes an amorphous carbon material, which is manufactured--in the form of thin layers--according to the plasma CVD process (CVD=Chemical Vapor Deposition) from hydrocarbons, under the effect of an RF [radio frequency] high-frequency field. This material exhibits light-emitting and semiconductive characteristics, as well as a high degree of hardness. The light-emitting characteristic has a peak at 2.6 eV [electron volt] and the optical energy gap amounts to 3.0 eV (for a material manufactured from propane at a pressure of 40 mTorr), with a comparatively high specific electrical resistance of 10.sup.12 or 10.sup.13 .OMEGA..multidot.cm.
On the other hand, from the "IDR-Industrie Diamanten Rudschau" [Industrial Diamond Magazine], volume 18 (1984), No. 4, pages 249 ff. it is known that amorphous, hydrogenous carbon (a-C:H), which has a relatively high hydrogen contents of 13 to 38 atomic percentage, possesses a specific electrical resistance of 10.sup.13 .OMEGA..multidot.cm and an optical energy gap of 0.8 to 1.8 eV. The a-C:H layers are thereby manufactured, for example, through plasma deposition from benzene vapor at pressures from 1 to 5 Pa by means of high-frequency discharge.
SUMMARY OF THE INVENTION
The object of the invention is to specify a semiconductor base material, which can be manufactured in thin-layer technology with the application of band processes and without high-temperature processes and which--in an undoped state--exhibits a high mobility of the n and p charge carriers, whereby the charge carrier mobility at room temperature should amount at least to 1 cm.sup.2 .multidot.V.sup.-1 .multidot.s.sup.-1.
According to the invention, this is accomplished with a semiconductor base material consisting of thin layers of amorphous, hydrogenated carbon (a-C:H) with a specific electrical resistance of between 10.sup.1 and 10.sup.8 .OMEGA..multidot.cm and a charge carrier concentration (n+p) of between 10.sup.10 and 10.sup.18 cm.sup.-3, respectively at room temperature.
DETAILED DESCRIPTION OF THE INVENTION
Up until now, semiconductive thin layers with an n and p charge carrier mobility of over 1 cm.sup.2 .multidot.V.sup.-1 .multidot.s.sup.-1, as exhibited by the material according to the invention, have not been known in the case of amorphous semiconductors in the undoped state.
In a semiconductive material, a high mobility of both comparable with crystalline semiconductor materials, such as Si and GaAs types of charge carriers, which is significant for many applications, exists when the ratio of the corresponding Hall constants to the specific electrical resistance is as large as possible. This is the case in the semiconductor base material according to the invention, i.e. special a-C:H. In this material, where clearly fewer than 68% of the carbon atoms exhibit diamond-like, tetrahedral bo
REFERENCES:
patent: 3814983 (1974-06-01), Weissfloch et al.
patent: 4630566 (1986-12-01), Asmussen et al.
patent: 4675265 (1987-06-01), Kazama et al.
patent: 4737379 (1988-04-01), Hudgens et al.
patent: 4883686 (1989-11-01), Doehler et al.
patent: 4910041 (1990-03-01), Yanagihara et al.
patent: 4929322 (1990-05-01), Sue et al.
Z. Has, S. Mitura & M. Clapa, "Electrical Properties Of Thin Carbon Films Obtained By R.F. Methane Decomposition On An R.F.-Powered Negatively Self-Biased Electrode", vol. 136 No. 2, pp. 161-166, Feb. 1986.
D. I. Jones and A. D. Stewart "Properties of Hydrogenated Amorphous Carbon Films and the Effects of Doping" Philosophical Magazines B, vol. 46 No. 5, pp. 423-434, 1982.
Abstracts of Japan, vol. 8 No. 114, May 26, 1984, Patent No. 59-26906.
Abstracts of Japan, vol. 7 No. 132, Jun. 9, 1983, Patent No. 58-48428.
M. Danno and M. Hanabusa "Amorphous Carbon Films Prepared by Photo-CVD From Acetylene" Materials Letters, vol. 4 No. 5,6,7, pp. 261-264, Jul. 1986.
Birkle Siegfried
Kammermaier Johann
Rittmayer Gerhard
Schulte Rolf
Winnacker Albrecht
Everhart B.
Hearn Brian E.
Siemens Aktiengesellschaft
LandOfFree
Method for the plasma deposition of hydrogenated, amorphous carb does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for the plasma deposition of hydrogenated, amorphous carb, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the plasma deposition of hydrogenated, amorphous carb will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-256837