Method for the planar joining of components of semiconductor...

Details Method for the planar joining of components of semiconductor... Method for the planar joining of components of semiconductor...

2011-01-25

2011-01-25

Le, Emily M (Department: 1793)

Metal fusion bonding

Process

Preplacing solid filler

C228S193000

Reexamination Certificate

active

07874475

ABSTRACT:
A method for the planar joining of components of semiconductor devices involves coating the components with diffusion materials on their upper sides and rear sides, respectively. Subsequently, the components to be joined one on the other are introduced into a reducing atmosphere. The components are aligned and a compressive pressure is exerted on the aligned components. While heating up the components to be joined in the reducing atmosphere to a diffusion joining temperature, isothermal solidification takes place, the diffusion joining temperature lying below the melting temperature of the forming diffusion joint of the joined material.

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