Method for the passivation of the mirror-faces surfaces of...

Details Method for the passivation of the mirror-faces surfaces of... Method for the passivation of the mirror-faces surfaces of...

2003-05-08

2008-03-04

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Packaging or treatment of packaged semiconductor

C438S778000

Reexamination Certificate

active

07338821

ABSTRACT:
The aim of the invention is to simplify known passivation methods. According to said method, the semi-conductor elements are heated and cleaned in a high vacuum with a gaseous, reactive low-energy medium. A closed, insulating or slightly conductive, transparent protective layer is applied in-situ, said layer being inert in relation to the material on the mirror-type surface and the remaining components of a natural oxide. In a preferred embodiment, the optical semi-conductor elements is a GaAs-based semi-conductor laser, the reactive and low-energy medium is an atomic hydrogen and the protective layer is made of ZnSe.

REFERENCES:
patent: 5144634 (1992-09-01), Gasser et al.
patent: 5851849 (1998-12-01), Comizzoli et al.
patent: 6734111 (2004-05-01), Lindstrom et al.

Affiliated with

Also associated with

Rating

Method for the passivation of the mirror-faces surfaces of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for the passivation of the mirror-faces surfaces of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the passivation of the mirror-faces surfaces of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3970157