Method for the passivation of crystal defects in polycrystalline

Details Method for the passivation of crystal defects in polycrystalline Method for the passivation of crystal defects in polycrystalline

1990-09-20

1992-12-08

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437937, 437939, 437949, 437980, 148DIG128, 136258, H01L 21322

Patent

active

051697912

ABSTRACT:
A method for the passivation of crystal defects in polycrystalline or amorphous silicon material using a temperature treatment step in a hydrogen-containing atmosphere the method results in favorable diode properties and favorable passivation properties in amorphous or, respectively, polycrystalline silicon material in a simple manner. Hydrogen-oxygen compounds are reduced at the surface of the silicon material, creating atomic hydrogen that diffuses into the silicon material.

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