Method for the microwave fabrication of boron doped semiconducto

Details Method for the microwave fabrication of boron doped semiconducto Method for the microwave fabrication of boron doped semiconducto

1986-04-10

1988-07-12

Beck, Shrive P.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 451, B05D 306, B05D 302

Patent

active

047569247

ABSTRACT:
A microwave glow discharge method for the deposition of p-doped semiconductor alloy material, which material is characterized by mono-atomic and tetrahedral incorporation of boron species into the semiconductor host matrix, thereby providing a p-doped semiconductor alloy material characterized by reduced bulk strain, reduced nucleation of undesirable morphological growth, improved adhesion to a substrate and reduced peeling and cracking.

REFERENCES:
patent: 4361638 (1982-11-01), Higashi
patent: 4409424 (1983-10-01), Devaud
patent: 4521447 (1985-06-01), Ovshinsky
patent: 4569697 (1986-02-01), Tsu
patent: 4600801 (1986-07-01), Guha
patent: 4619729 (1986-10-01), Johncock

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