Method for the manufacturing of a capacitive pressure...

Measuring and testing – Fluid pressure gauge – Diaphragm

Reexamination Certificate

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C073S724000, C029S592000, C029S025010, C029S025020

Reexamination Certificate

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11114215

ABSTRACT:
The invention relates to measuring devices for the measuring of pressure, and more specifically to capacitive pressure sensors. The silicon crystal planes {111} are located at the corners of a wet etched membrane well of a pressure sensor element according to the present invention. An object of the invention is to provide an improved method of manufacturing a capacitive pressure sensor, and a capacitive pressure sensor suitable for use, in particular, in small capacitive pressure sensor solutions.

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patent: 01261872 (1989-10-01), None
patent: 11135806 (1999-05-01), None

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