Method for the manufacture of thin film transistors

Details Method for the manufacture of thin film transistors Method for the manufacture of thin film transistors

1986-04-17

1987-04-07

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29584, 148175, 357 4, H01L 21203, H01L 2106, H01L 21363

Patent

active

046549595

ABSTRACT:
A thin film transistor comprises an insulating substrate, a semiconductor layer on the substrate, an electrically insulating oxide layer overlaying the semiconductor layer, and an electroconductive layer overlaying the oxide layer. The oxide layer is formed by oxidizing a portion of the semiconductor through a patterned opening in a photo resist. A method for the manufacture of the same is also disclosed.

REFERENCES:
patent: 3481031 (1969-12-01), Klasens
patent: 3513042 (1970-05-01), Hagon
patent: 3658586 (1972-04-01), Wang
patent: 4208686 (1978-08-01), Jacobus
patent: 4242156 (1980-12-01), Peel
patent: 4318216 (1982-03-01), Hsu
patent: 4404578 (1983-09-01), Takafuji et al.
patent: 4447823 (1984-05-01), Maeguchi et al.

Affiliated with

Also associated with

Rating

Method for the manufacture of thin film transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for the manufacture of thin film transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the manufacture of thin film transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1078360