Method for the manufacture of thin-film capacitors

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148DIG14, 148DIG93, 427 531, 427 541, 357 51, 437187, 437238, 437245, 437919, H01L 2126, H01G 412

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048142891

ABSTRACT:
Thin-film capacitors are produced with laser chemical vapor deposition technology on a substrate, which is preferably the substrate of an integrated circuit, by forming alternating layers of electrodes and dielectric.

REFERENCES:
patent: 3781549 (1973-12-01), Fletcher et al.
patent: 3796926 (1974-03-01), Cole et al.
patent: 4437139 (1984-03-01), Howard
L. M. Arzubi and R. L. Bishop, "Metal-Oxide Semiconductor capacitor," IBM TDB, vol. 17 No. 6, Nov. 1974.
J. K. Howard, "Dual Dielectric Capacitor," IBM TDB, vol. 23 No. 3, Aug. 1980.
R. A. Bailey and J. H. Nevin, "Thin-Film Multilayer Capacitors . . . ", IEEE Transactions on Parts, Hybirds & Pack., vol PHP-1, No. 4, pp. 361-364, Dec. 1976.
R. Solanki, et al., "Photodeposition of Aluminum Oxide and Aluminum Thin Films", Appl. Phys. Lett. 454-456, (Sep. 1983), 43(5).
S. Szikora, et al., "Laser-Induced Deposition of SiO.sub.2 " Materials Lett. 263-264, (Mar. 1984), 2(4A).

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