Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Forming base region of specified dopant concentration profile
Patent
1997-07-08
1999-11-09
Bowers, Charles
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Forming base region of specified dopant concentration profile
H01L 21331
Patent
active
059813482
ABSTRACT:
Disclosed is a method for the fabrication of an extrinsic base of an NPN transistor using high frequency bipolar technology. According to the method, using a doping of the extrinsic base of the transistor by ion implantation, the amorphous crystal lattice is recrystallized by very high-speed thermal annealing before the dopants of the extrinsic base are diffused in the epitaxial layer.
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French Search Report from French Patent Application 96 08832, filed Jul. 10, 1996.
IEEE Transactions on Electron Devices, vol. 38, No. 1, Jan. 1, 1991, pp. 107-110, Chantre, A., et al., "Identification of a Corner Tunneling Current Component In Advanced CMOS-Compatible Bipolar Transistors".
IEEE Transcation On Electron Devices, vol. 35, No. 8, Aug. 1988, pp. 1322-1327, Tze-Chiang Chen, et al., "An Advanced Bipolar Transistor With Self-Aligned Ion-Implanted Base and W/Poly Emitter".
Bowers Charles
SGS-Thomson Microelectronics S.A.
Thompson Craig
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