Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1989-01-13
1991-01-15
Chaudhuri, Olik
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
29 2542, H01G 410
Patent
active
049843427
ABSTRACT:
A method for manufacturing solid electrolyte capacitors is provided. Pursuant to the method, pores in formed sintered members composed of a valve metal are first nearly filled with manganese dioxide that is produced by pyrolysis of solutions that contain manganese nitrate. Following thereupon, the sintered members are immersed into a dry melt of manganese nitrate that may comprise an additive of manganese dioxide and/or silicon dioxide powder. Subsequently, the members are introduced into a furnace, and heated to approximately 100.degree. C. in dry air. Subsequently, fine drops of water are applied onto the surface of the heated sintered members and the pyrolysis is ended at temperatures of approximately 200.degree. to about 350.degree. C. in a mist of water vapor that flows by.
REFERENCES:
patent: 3950842 (1976-04-01), Fournier et al.
patent: 4041359 (1977-08-01), Mizushima
patent: 4042420 (1977-08-01), Nishino
patent: 4079503 (1978-03-01), Schnabel
patent: 4104704 (1978-08-01), Weaver
patent: 4105513 (1978-08-01), Nishino
patent: 4494299 (1985-01-01), Franklin
patent: 4706375 (1987-11-01), Bernard et al.
Auer Heinz
Winkler Gernot
Chaudhuri Olik
Ojan Ourmazd S.
Siemens Aktiengesellschaft
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