Method for the manufacture of silicon oxide layers doped with bo

Details Method for the manufacture of silicon oxide layers doped with bo Method for the manufacture of silicon oxide layers doped with bo

1987-10-27

1988-12-13

Morgenstern, Norman

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

437236, 437240, 501 54, C23C 1600, B05D 512, C03C 306

Patent

active

047910054

ABSTRACT:
A method for the manufacture of silicon layers containing boron and phosphorus dopants wherein the silicon wafers are positioned in a reaction chamber into which there is introduced, from separate sources, (a) tetraethylorthosilicate as a source of silicon dioxide, (b) trimethylborate as a source of boron, and (c) a phosphorus source. The three reactants are decomposed in the reaction chamber to deposit silicon dioxide doped with boron and phosphorus onto the wafers, the decomposition being carried out at a temperature of at least 600.degree. C. and at a substantially subatmospheric pressure.

REFERENCES:
patent: 3481781 (1969-12-01), Kern
patent: 3571914 (1971-03-01), Lands
patent: 4217375 (1980-08-01), Adams
patent: 4324576 (1982-04-01), Matsuyama et al.
patent: 4349584 (1982-09-01), Flatley
patent: 4363830 (1982-12-01), Itsu
patent: 4513026 (1985-04-01), Miyamoto et al.
patent: 4546016 (1985-10-01), Kern
patent: 4557950 (1985-12-01), Foster
Winkle et al., "Improved Atmospheric-Pressure CVD System for . . . Phosphosilicate Glass Thin Films", Solid State Technology, vol. 24, No. 10, Oct. 1981, pp. 123-128.
Article by Kern et al. in RCA Review, vol. 43, Sep. 1982, pp. 423-457.
Article by Smolinsky et al. "Measurements of Temperature Dependent Stress of Silicon Oxide", J. Electrochem. Soc., Apr. 1985, pp. 950-954, vol. 132-4.

Affiliated with

Also associated with

Rating

Method for the manufacture of silicon oxide layers doped with bo does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for the manufacture of silicon oxide layers doped with bo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the manufacture of silicon oxide layers doped with bo will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2195593