Method for the manufacture of semiconductor device using refract

Details Method for the manufacture of semiconductor device using refract Method for the manufacture of semiconductor device using refract

1982-07-30

1984-05-15

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

156628, 156647, 156657, 156662, 427 88, 427 93, 427 94, 427259, 430314, H01L 21302

Patent

active

044488009

ABSTRACT:
A semiconductor manufacturing method which uses a refractory metal as a lift-off material and employs, in combination, a dry etching process suitable for forming a miniature pattern without undercutting and a film deposition method for deposing the lift-off material with directionality in a direction perpendicular to the substrate surface. A semiconductor device is fabricated by a lift-off method which is free from the fear of contamination, permits easy lift off of the lift-off material, even if large in area, and hence suitable for the formation of a high-density pattern.

REFERENCES:
patent: 3873361 (1975-03-01), Franco
patent: 4353935 (1982-10-01), Symersky

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