Chemistry: electrical and wave energy – Processes and products
Patent
1976-03-15
1977-08-23
Tufariello, T. M.
Chemistry: electrical and wave energy
Processes and products
20412943, C25D 502, C25F 314
Patent
active
040438775
ABSTRACT:
A method of manufacturing microscopically small metal structures which are used in a memory which has cylindrical magnetic domains or magnetic bubbles characterized by creating patterns or channels in a first photo-resist layer disposed on an Ni-Fe layer which was vapor deposited on a storage layer to expose portions of the Ni-Fe layer corresponding to a pattern for guide loop generators, domain annihilators, control lines and/or read lines, electroplating a first gold layer on the Ni-Fe layer, electroplating a Ni-P layer on the first gold layer, and then placing a second and third gold layer successively on top of the Ni-P layer, removing the first photo-resist layer, applying a second photo-resist layer and forming channels or patterns therein to expose portions of the Ni-Fe layer which patterns or channels correspond to the manipulative patterns or domain extenders, electroplating a fourth gold layer in the exposed portions of the Ni-Fe layer, depositing a thick Ni-Fe layer on the fourth gold layer and then removing the second photo-resist layer, applying a third photo-resist layer, exposing and developing the third photo-resist layer to leave the photo-resist layer on the portions to form the detector strips and portions overlapping read line, removing the Ni-Fe layers which have been vapor deposited on the storage layer by etching the zones which are free of the photo-resist and subsequently removing the third photo-resist layer.
REFERENCES:
patent: 3560358 (1971-02-01), Black
patent: 3901770 (1975-08-01), Littwin
patent: 3919055 (1975-11-01), Urban
patent: 3963587 (1976-06-01), Kreckel
AIP Conference Proceedings, No. 5, 1971, pp. 215-219.
Applied Physics Letters, vol. 17, No. 8, Oct. 15, 1970, pp. 328-332.
Journal of Applied Physics, vol. 42, No. 4, Mar. 15, 1971, pp. 1362-1363.
Siemens Aktiengesellschaft
Tufariello T. M.
LandOfFree
Method for the manufacture of microscopically small metal or met does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for the manufacture of microscopically small metal or met, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the manufacture of microscopically small metal or met will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2314072