Method for the manufacture of metal silicide layers by means of

Details Method for the manufacture of metal silicide layers by means of Method for the manufacture of metal silicide layers by means of

1985-03-22

1986-08-26

Pianalto, Bernard D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 87, 427 95, 427 99, 427124, B05D 306

Patent

active

046082719

ABSTRACT:
A method for the deposition of a silicide layer of a high melting metal onto a substrate of silicon or silicon dioxide wherein reaction gases consisting of a decomposable silicon-containing hydrogen compound, or a halogenated silane and a metal halide are pyrolytically decomposed in a reaction zone to form a reaction mixture from which a metal silicide is deposited on the substrate at reduced pressures. During the decomposition of the gases and deposition of the metal silicide, the gas pressure in the reaction zone is maintained between 1.3.times.10.sup.-3 to 5.times.10.sup.-2 mbar. This type of pressure is most conveniently maintained by means of a turbomolecular pump.

REFERENCES:
patent: 4359490 (1982-11-01), Lehrer

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