Powder metallurgy processes – Powder metallurgy processes with heating or sintering – Powder shape or size characteristics
Patent
1986-09-17
1987-09-01
Lechert, Jr., Stephen J.
Powder metallurgy processes
Powder metallurgy processes with heating or sintering
Powder shape or size characteristics
419 29, 419 38, 419 53, 419 54, 419 55, 156603, 156DIG64, 156DIG88, 264 61, 264125, 264332, 23295S, B22F 100
Patent
active
046907971
ABSTRACT:
A method for the manufacture of large area silicon crystal bodies suitable for use in the manufacture of solar cells wherein silicon powder having a small grain size is used as the starting material. This powder is compressed to form a thin layer in a suitable form, the form having at least a surface composed of silicon or a silicon compound. The form is filled to a depth approximating the final dimensions of the article. The powder is sintered in the form, and the compressed, sintered layer is converted into a self-supporting silicon foil. This foil is melted partially up to at least half its thickness and recrystallized in a two-stage temperature treatment. The melting occurs by means of a single-sided energy irradiation. The silicon foil is not deteriorated in terms of its mechanical stability and shaped by means of the single-sided, optical type heating. The larger grains which arise in the first melting and recrystallization are used to continue growth over the full layer thickness of the silicon body during the second melting and recrystallization. This produces silicon bodies for solar cells which can be economically manufactured and can be manufactured with high purity and crystal quality.
REFERENCES:
patent: 4090851 (1978-05-01), Berkman et al.
patent: 4099924 (1978-07-01), Berkman et al.
patent: 4330358 (1982-05-01), Grabmaier et al.
patent: 4357201 (1982-11-01), Grabmaier et al.
patent: 4486265 (1984-12-01), Little
patent: 4599245 (1986-07-01), Falckenberg et al.
patent: 4643797 (1987-02-01), Grabmaier et al.
Eyer Achim
Raeuber Armin
Schillinger Norbert
Lechert Jr. Stephen J.
Siemens Aktiengesellschaft
LandOfFree
Method for the manufacture of large area silicon crystal bodies does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for the manufacture of large area silicon crystal bodies , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the manufacture of large area silicon crystal bodies will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1264247