Method for the manufacture of large area silicon crystal bodies

Powder metallurgy processes – Powder metallurgy processes with heating or sintering – Powder shape or size characteristics

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419 29, 419 38, 419 53, 419 54, 419 55, 156603, 156DIG64, 156DIG88, 264 61, 264125, 264332, 23295S, B22F 100

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active

046907971

ABSTRACT:
A method for the manufacture of large area silicon crystal bodies suitable for use in the manufacture of solar cells wherein silicon powder having a small grain size is used as the starting material. This powder is compressed to form a thin layer in a suitable form, the form having at least a surface composed of silicon or a silicon compound. The form is filled to a depth approximating the final dimensions of the article. The powder is sintered in the form, and the compressed, sintered layer is converted into a self-supporting silicon foil. This foil is melted partially up to at least half its thickness and recrystallized in a two-stage temperature treatment. The melting occurs by means of a single-sided energy irradiation. The silicon foil is not deteriorated in terms of its mechanical stability and shaped by means of the single-sided, optical type heating. The larger grains which arise in the first melting and recrystallization are used to continue growth over the full layer thickness of the silicon body during the second melting and recrystallization. This produces silicon bodies for solar cells which can be economically manufactured and can be manufactured with high purity and crystal quality.

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patent: 4486265 (1984-12-01), Little
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patent: 4643797 (1987-02-01), Grabmaier et al.

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