Method for the manufacture of gallium arsenide thin film solar c

Details Method for the manufacture of gallium arsenide thin film solar c Method for the manufacture of gallium arsenide thin film solar c

1985-09-20

1987-04-14

Weisstuch, Aaron

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29572, 136258, 136262, 148 15, 148DIG48, 148DIG56, 148DIG90, 148DIG152, 148DIG153, 427 74, 427 87, 357 30, 357 59, H01L 3118

Patent

active

046576037

ABSTRACT:
A method for the manufacture of gallium arsenide thin film solar cells on inexpensive substrate material whereby an intermediate layer of highly doped, amorphous germanium is employed in order to promote the growth of the gallium arsenide layers. A high-energy radiation is directed to specific, prescribed points on the highly doped, amorphous germanium layer thereby generating centers having a defined crystal orientation, so that the epitaxial layer spreads laterally from these centers in a surface-covering fashion during the epitaxial vapor phase deposition. The solar cells produced by designational grain growth can be manufactured with high purity in a simple way and have an efficiency (greater than 20%) comparable to known mono-crystalline solar cells.

REFERENCES:
patent: 4053350 (1977-10-01), Olsen et al.
patent: 4370510 (1983-01-01), Stirn
patent: 4392297 (1983-07-01), Little
S. S. Chu et al., J. Appl. Phys., vol. 48, pp. 4848-4849, (1977).
B-Y. Tsaur et al., Appl. Phys. Lett., vol. 41, pp. 347-349, (1982).

Affiliated with

Also associated with

Rating

Method for the manufacture of gallium arsenide thin film solar c does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for the manufacture of gallium arsenide thin film solar c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the manufacture of gallium arsenide thin film solar c will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1783259