Method for the manufacture of epitaxial Ga.sub.1-x Al.sub.x As:S

Details Method for the manufacture of epitaxial Ga.sub.1-x Al.sub.x As:S Method for the manufacture of epitaxial Ga.sub.1-x Al.sub.x As:S

1981-06-16

1983-06-07

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29569L, 29576E, 148172, 156622, H01L 21208

Patent

active

043869750

ABSTRACT:
The invention relates to a method and apparatus for manufacturing epitaxial Ga.sub.1-x Al.sub.x As:Si films via liquid-phase epitaxy, using a boat in a quartz tube. The Ga, which is contained in a graphite boat, open at the long side, is baked out first. The Ga-melt is allowed to run onto GaAs substrate wafers, on which Si is deposited, and to be drawn into the gap between the GaAs-substrate wafers and the plane graphite surfaces. The thin Ga-melt formed above the GaAs substrate wafers is then brought into contact with the melted Al and is allowed to cool.
According to the method of the invention, luminescence diodes of the (Ga, Al) As type, the emission of which is in the wave range of 650 to 800 nm, can be constructed.

REFERENCES:
patent: 3533856 (1970-10-01), Panish et al.
patent: 3631836 (1972-01-01), Jarvela et al.
patent: 3783825 (1974-01-01), Kobayasi et al.
patent: 3889635 (1975-06-01), Aengenheister
patent: 3897281 (1975-07-01), Gilbert et al.
patent: 3933123 (1976-01-01), Andre
patent: 3997377 (1976-12-01), Izawa et al.
patent: 4123302 (1978-10-01), Marinelli
patent: 4287848 (1981-09-01), Leibenzeder et al.

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