Method for the manufacture of boron-containing films by CVD or e

Fishing – trapping – and vermin destroying

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437235, 437238, 148DIG118, 427 99, H01L 2100, H01L 2102, C23C 1100

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active

051806924

ABSTRACT:
This invention relates to a method for forming a boron-containing film of high quality on the surfaces of semiconductor wafers by CVD or epitaxial techniques using reaction gases including at least boron trifluoride.

REFERENCES:
patent: 4557950 (1985-12-01), Foster
patent: 4624862 (1986-11-01), Yang et al.
patent: 4717585 (1988-01-01), Ishihara
Wolf, S., Silicon Processing for the VLSI Era, vol. 1, Lattice Press, 1986, pp. 133-136, 168-170, 177, 182-184, 190.

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