Method for the manufacture of at least one thin film field effec

Details Method for the manufacture of at least one thin film field effec Method for the manufacture of at least one thin film field effec

1985-06-11

1987-08-11

Hearn, Brian E.

Fishing, trapping, and vermin destroying

357 237, 357 30, 437 2, 437 20, H01L 2100, H01L 2978

Patent

active

046851950

ABSTRACT:
The invention relates to a method for the manufacture of thin film field effect transistors of the type having self-alignment of the electrodes and obtained on an insulating substrate.
The method comprises two constructional variants making it possible to produce a submicron gate electrode determining a minimum channel length.
The invention is applicable to the field of large surface or area microelectronics and in particular to the control and addressing of a flat liquid crystal screen or an image sensor.

REFERENCES:
patent: 4174217 (1979-11-01), Flatley
patent: 4393572 (1983-07-01), Policastro et al.
patent: 4532698 (1985-08-01), Fang et al.
patent: 4542577 (1985-09-01), Jackson
patent: 4551905 (1985-11-01), Chao et al.
J. Vac. Sci. Technol. 19(3) Sep./Oct. 1981, pp. 693-695 (Speidell).

Affiliated with

Also associated with

Rating

Method for the manufacture of at least one thin film field effec does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for the manufacture of at least one thin film field effec, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the manufacture of at least one thin film field effec will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-395498