Method for the manufacture of a transistor having differentiated

Details Method for the manufacture of a transistor having differentiated Method for the manufacture of a transistor having differentiated

1993-01-13

1994-08-09

Thomas, Tom

Fishing, trapping, and vermin destroying

437147, 437184, 437912, H01L 21266

Patent

active

053366271

ABSTRACT:
The disclosure relates to the making of the source and drain access regions of a field-effect transistor, these two regions being differentiated. The control region is defined by means of a three-layer mask of metal, resin and metal. A resin mask protects the drain access region, thus enabling the implantation of the source access region. After the dissolving of the resins, the drain access region is implanted.

REFERENCES:
patent: 4283483 (1981-08-01), Coane
patent: 4992387 (1991-02-01), Tamura
patent: 4997779 (1991-03-01), Kohno
patent: 5001077 (1991-03-01), Sakai
patent: 5112766 (1992-05-01), Fujii et al.
patent: 5187111 (1993-02-01), Nogami et al.
Japanese Journal of Applied Physics/Part 2: Letters 27, Jul. 1988, No. 7, T. Kimura, et al., pp. 1340-1343, "Asymmetric Implantation Self-Alignment Technique . . . ".
Patent Abstracts Of Japan, vol. 8, No. 103 (E-244)(1540) & JP-A-59 018 679 Jan. 31, 1984, K. Kotani, "Semiconductor Device."

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