Method for the manufacture of A.sub.3 B.sub.5 light-emitting dio

Details Method for the manufacture of A.sub.3 B.sub.5 light-emitting dio Method for the manufacture of A.sub.3 B.sub.5 light-emitting dio

1984-10-24

1986-08-19

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 148173, 29569L, H01L 21208

Patent

active

046067809

ABSTRACT:
A method for the manufacture of A.sub.3 B.sub.5 light-emitting diodes, particularly of light-emitting (Ga,Al)As diodes with Te and Zn as doping materials is provided. A first n-doped GaAlAs layer is epitaxially applied on a GaAs substrate from an n-doped (S,Se,Te) Ga,Al,As melt and after an interim precipitation without contact with the GaAs substrate, preferably on an auxiliary substrate, a GaAlAs layer p-doped with Zn or Mg is deposited on the substrate already epitaxially coated with the n-GaAlAs layer. Efficient light-emitting diodes are obtained.

REFERENCES:
patent: 3537029 (1970-10-01), Kressel et al.
patent: 4386975 (1983-06-01), Leibenzeder et al.
patent: 4427841 (1984-01-01), Rahilly
patent: 4507157 (1985-03-01), Oliver
patent: 4540451 (1985-09-01), Leibenzeder et al.

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