Method for the manufacture of a pn-junction having high dielectr

Details Method for the manufacture of a pn-junction having high dielectr Method for the manufacture of a pn-junction having high dielectr

1987-08-17

1988-07-12

Ozaki, George T.

Fishing, trapping, and vermin destroying

437141, 437958, H01L 21383

Patent

active

047570318

ABSTRACT:
A method for the manufacture of a pn-junction having high dielectric strength starting with a doped semiconductor body of a first conductivity type. A zone of a second conductivity type is formed in the semiconductor body inwardly from a surface thereof. At least one recess is then provided inwardly from the surface and including a recess which is formed at the extreme marginal edge of the semiconductor body. Dopant of the second conductivity type is diffused into the semiconductor body to form zones of varying dopant penetration depths from the center of the body to the marginal edge.

REFERENCES:
patent: 3203840 (1965-08-01), Harris
patent: 3271211 (1966-09-01), Pritchard et al.
patent: 3341380 (1967-09-01), Mets et al.
patent: 3387360 (1968-06-01), Nakamura et al.
patent: 3436282 (1969-04-01), Shoda
patent: 4416708 (1983-11-01), Abdoulin et al.

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