Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Patent
1995-09-07
1997-05-06
Breneman, R. Bruce
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
438 34, 438 39, 438943, 117105, H01R 2122
Patent
active
056271000
ABSTRACT:
A method for making a set of surface-emitting laser diodes comprises the making of reflectors by the epitaxial growth of at least one semiconductor material through a mask having apertures with inclined flanks. This method leads to the obtaining of the Bragg reflectors obtained in situ, removing the need for the ion etching of a semiconductor substrate followed by a phase for the conditioning of the surface of the sample before the preparation of the desired laser structure.
Application: optical power source.
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Applied Physics Letters, vol. 61, No. 13, Sep. 28, 1992, pp. 1487-1489; Donnelly, J. P., et al.; High Quantum Efficiency Monolithic Arrays of Surface-Emitting Algaas Diode Lasers With Dry-Etched Vertical Facets and Parabolic Deflecting Mirrors'.
Garcia Jean-Charles
Hirtz Jean-Pierre
Maurel Philippe
"Thomson-CSF"
Breneman R. Bruce
Paladugu Ramamohan Rao
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