Method for the making of an optoelectronic device

Details Method for the making of an optoelectronic device Method for the making of an optoelectronic device

1992-06-29

1993-12-21

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437126, 437944, 437948, 437129, 118719, H01L 2120

Patent

active

052721060

ABSTRACT:
Disclosed is a method for the making of an optoelectronic device such as buried lasers in which the different layers of the device are chiefly made during a single step of epitaxy by means of a removable mechanical mask.

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Applied Physics Letters, vol. 56, No. 11, Mar. 12, 1990, New York, US, pp. 1014-1016; H. P. Lee, et al.: "Double-Heterostructure GaAs/AlGaAs Lasers on Si Substrates With Reduced Threshold Current and Built-In Index Guiding by Selective-Area Molecular Beam Epitaxy".
Applied Physics Letters, vol. 31, No. 4, Aug. 15, 1977, New York, US, pp. 301-304; W. T. Tsang, et al.: "Selective Area Growth of GaAs/Al.sub.x Ga.sub.1-x As Multilayer Structures with Molecular Beam Epitaxy Using Si Shadow Masks".

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