Method for the making heteroepitaxial thin layers and electronic

Details Method for the making heteroepitaxial thin layers and electronic Method for the making heteroepitaxial thin layers and electronic

1993-04-02

1994-11-01

Kunemund, Robert

Fishing, trapping, and vermin destroying

437 83, 437 84, 437 90, 437133, 437105, 437107, 437126, 437129, H01L 2120

Patent

active

053607546

ABSTRACT:
The disclosure relates to the field of monocrystalline thin layers deposited on a substrate having an identical or a different nature, from a vapor phase. On the substrate made of monocrystalline material A, a cavity is built, determined by one face of the substrate and one face of a layer made of a material D in such a way that there can be neither nucleation nor growth on the faces exposed to the vapor phase. The growth is done from a seed made of monocrystalline material B located between two faces of the substrate and of the layer. The seed made of monocrystalline material B may be of a nature different from that of the substrate (for example, substrate=silicon and material B=GaAs) and is made, for example, by MBE or MOCVD. The material C to be made to grow is different from the material B of the seed. The material C is, for example, InP and the growth is done by VPE.

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