Method for the low temperature preparation of amorphous boron ni

Details Method for the low temperature preparation of amorphous boron ni Method for the low temperature preparation of amorphous boron ni

1990-02-28

1991-10-01

Dixon, Jr., William R.

Compositions: ceramic

Ceramic compositions

Refractory

501 94, 423276, 423284, 423289, 423290, 423292, C04B 3502, C04B 3558, C01B 3514, C01B 3506

Patent

active

050533657

ABSTRACT:
The invention relates to an energy efficient method for the production of boron nitride materials at temperatures of from about 100 degrees to about 230 degrees Centigrade. The boron nitride materials produced by the present invention are carbon-free and are prepared by combining at reduced pressure an alkali metal, such as potassium, rubidium, cesium, or mixtures thereof, or a potassium/sodium mixture, with a boron-, nitrogen-, and halogen-containing material, such as a haloborazine, haloborazane, or haloaminoborane. The preferred boron-, nitrogen-, and halogen-containing materials are trihalogenated, the preferred halogen is chlorine, and the preferred alkali metal is cesium.

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