Method for the indirect deposition of amorphous silicon and poly

Details Method for the indirect deposition of amorphous silicon and poly Method for the indirect deposition of amorphous silicon and poly

1985-07-16

1987-01-06

Childs, Sadie L.

Coating processes

Coating by vapor, gas, or smoke

Carbon or carbide coating

427 85, 427 86, 427 87, 427255, 4272551, 4272552, 4272553, 4272555, C23C 1624, C23C 1632

Patent

active

046346058

ABSTRACT:
This invention relates to a method and apparatus for depositing films of amorphous and polycrystalline silicon and alloys thereof, by thermally decomposing a silicon bearing gas or gases and depositing the film onto a temperatured controlled substrate. The area of the heated surface is less than the area of the substrate. The substrate moves relative to independent of and outside of the heated surface.

REFERENCES:
patent: 3627569 (1971-12-01), Beecham
patent: 4100879 (1978-07-01), Goldin et al.
patent: 4237150 (1980-12-01), Wiesmann
patent: 4237151 (1980-12-01), Strongin et al.
patent: 4262630 (1981-04-01), Bochkarev et al.
patent: 4400409 (1983-08-01), Izu et al.
patent: 4430149 (1984-02-01), Berkman

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