Method for the high rate plasma deposition of high quality mater

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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427 47, B05D 306

Patent

active

048836869

ABSTRACT:
A method of forming a high flux of activated species, such as ions, of an energy transferring gas by employing a substantial pressure differential between a first conduit in which the energy transferring gas is introduced into a vacuumized enclosure and the background pressure which exits in said enclosure. In one embodiment, the flow rate of the energy transferring gas flowing through said first conduit, when taken in conjunction with said pressure differential, causes the high flux of activated species of the energy transferring gas to collide with a precursor deposition/etchant gas, remotely introduced into the enclosure through a second conduit, for forming deposition/etchant species therefrom. In an alternate embodiment, the pressure differential causes those activated species, themselves, to be either deposited upon or etched away from the surface of a remotely positioned substrate.

REFERENCES:
patent: 4656052 (1987-04-01), Satou et al.
patent: 4657774 (1987-04-01), Satou et al.
patent: 4683149 (1987-07-01), Suzuki et al.
patent: 4778561 (1988-10-01), Ghanbari

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